Fabrication of semiconductor devices
AssigneeNUP2 Incorporated
InventorDaniel R. Shepard
Life of this patent
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Abstract
Fabrication of microelectronic devices is accomplished using a substrate having a recessed pattern. In one approach, a master form is used to replicate a substrate having a pit pattern. In another approach, the substrate is produced by etching. A series of stacked layers having desired electrical characteristics is applied to the substrate and planarized in a manner that creates electrical devices and connections therebetween. The microelectronic devices can include a series of row and columns and are used to store data at their intersection.
Claims31
A method of fabricating an electronic device, the method comprising the steps of:
- a. fabricating a form having a raised topology complementary to a desired pattern of pits and channels;
- b. applying the form to a moldable material to impose the pattern therein;
- and
- c. applying to the patterned material a series of layers having desired electrical properties to create the electronic device.
A method of fabricating a memory device having data contents, the method comprising the steps of:
- a. defining a pattern of pits and channels on a substrate, the channels including a first series of channels running in a first direction and a second series of channels running in a second direction substantially perpendicular to the first direction, wherein (i) the first-series channels and the second-series channels cross at crossing points, and (ii) the pits are located at the crossing points;
- and
- b. forming nonlinear elements in at least some of the pits.
A method of fabricating a microelectronic device, the method comprising the steps of:
- a. defining a pattern on a substrate having a surface, the pattern comprising recesses descending below the surface of the substrate;
- b. applying to the patterned substrate a series of layers each having a predetermined electrical property;
- and
- c. planarizing following application of at least some of the layers to remove at least some portion of the layers then disposed above the surface of the substrate, the layers cooperating to form an electronic circuit.
A microelectronic device comprising:
- a substrate having therein a recessed contour pattern;
- and
- a plurality of stacked layers each having a predetermined electrical characteristic, all of the stacked layers being disposed within the contour pattern and some of the layers also residing on the substrate, the layers cooperating to form the electronic device.
A method of fabricating a microelectronic device, the method comprising the steps of:
- a. defining a pattern on a material having a surface, the pattern comprising recesses descending below the surface of the material;
- b. applying to the patterned material a series of layers each having a predetermined electrical property;
- c. planarizing following application of at least some of the layers to remove at least some portion of the layers then disposed above the surface of the material, thereby exposing at least one of the layers;
- and
- d. etching a portion of at least one exposed layer, the layers thereupon cooperating to form an electronic circuit.
A method of fabricating a microelectronic device, the method comprising the steps of:
- a. defining a pattern on a material having a surface, the pattern comprising recesses descending below the surface of the material to varying depths;
- b. applying to the patterned material a series of layers each having a predetermined electrical property;
- and
- c. planarizing following application of at least some of the layers to remove at least a portion of the layers then disposed above the surface of the material, the planarization thereby exposing portions of said layers for further processing as a result of the varying recess depths within the patterned material.
Dependencies are inferred from the claim text.