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US 6,586,325 B2Granted
Process for making an electronic device having a multilevel structure
AssigneeCosmos Vacuum Technology Corporation
InventorChung-Lin Chou
Life of this patent
Estimating the term…
Abstract
A process includes the steps of selectively and non-porously anodizing a metal film on a substrate to form a dense non-porous oxide layer on a first exposed area of the metal film, and selectively and porously anodizing the metal film and the dense non-porous oxide layer to convert the dense non-porous oxide layer and the metal film at a second exposed area into a porous oxide layer.
Claims6
A process for making an electronic device, the process comprising the steps of:
- preparing a substrate having an insulative planar surface;
- forming a metal film over said planar surface of said substrate;
- selectively masking said metal film with a first mask to define an unexposed area and a first exposed area on said metal film;
- non-porously anodizing said metal film to form a dense non-porous oxide layer on said first exposed area of said metal film;
- removing said first mask from said metal film;
- selectively masking said metal film and said dense non-porous oxide layer with a second mask to define a second exposed area on said dense non-porous oxide layer, said second exposed area being offset from said unexposed area on said metal film;
- porously anodizing said metal film and said dense non-porous oxide layer to convert said dense non-porous oxide layer and said metal film at said second exposed area into a porous oxide layer;
- and
- removing said second mask from said metal film and said dense non-porous oxide layer.
6 more elements
A process for making an electronic device, the process comprising the steps of:
- preparing a substrate having an insulative planar surface;
- forming a metal film over said planar surface of said substrate, said metal film having an upper surface;
- selectively masking said metal film with a first mask to define a first exposed area and first unexposed areas on said upper surface of said metal film, said first unexposed areas being spaced apart by said first exposed area;
- non-porously anodizing said metal film to form a dense non-porous oxide layer on said first exposed area of said metal film and to define a pattern of conductive surface contacts at said first unexposed areas of said metal film, said surface contacts being spaced apart by said dense non-porous oxide layer;
- removing said first mask from said surface contacts of said metal film;
- selectively masking said surface contacts and said dense non-porous oxide layer with a second mask to define second unexposed areas, each of which at least covers a respective one of said surface contacts, and a second exposed area on said dense non-porous oxide layer, said second exposed area being offset from said surface contacts;
- porously anodizing said metal film and said dense non-porous oxide layer to convert said dense non-porous oxide layer and said metal film at said second exposed area into a porous oxide layer and to define a pattern of conductive paths that are spaced apart by said porous oxide layer and that respectively extend from said surface contacts to said planar surface of said substrate;
- and
- removing said second mask from said surface contacts and said dense non-porous oxide layer.
6 more elements
Dependencies are inferred from the claim text.