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US 6,586,318 B1Granted
Thin phosphorus nitride film as an N-type doping source used in laser doping technology
AssigneeXerox Corporation
InventorsJeng Ping Lu, Ping Mei, James B. Boyce
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Abstract
An improved method and system for laser doping a semiconductor material is described. In the invention, phosphorous nitride is used as a dopant source. The phosphorous nitride is brought into close proximity with a region of the semiconductor to be doped. A pulse of laser light decomposes the phosphorous nitride and briefly melts the region of semiconductor to be doped to allow incorporation of dopant atoms from the phosphorous nitride into the semiconductor.
Claims12
A method of doping a semiconductor comprising the operations of:
- placing a layer of phosphorous nitride in close proximity to a semiconductor surface;
- and
- directing a laser to dope the semiconductor with atoms from the layer of phosphorous nitride.
A method of doping a semiconductor comprising the operations of:
- placing a layer of a phosphorous nitride dopant containing compound in solid form in close proximity to a semiconductor surface, the phosphorous nitride dopant containing compound being stable in air, and
- directing a laser at the solid form of the phosphorous nitride dopant containing compound to dope the semiconductor with atoms from the layer of dopant containing compound.
Dependencies are inferred from the claim text.