Salicide block for silicon-on-insulator (SOI) applications
AssigneeAdvanced Micro Devices, Inc.
InventorDavid Donggang Wu
Life of this patent
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Abstract
A method is provided, the method comprising forming a buffer layer above a structure layer, and forming a dielectric layer above the buffer layer. The method also comprises patterning the dielectric layer to form a salicide block above a portion of the structure layer protecting the portion from a subsequent salicidation. A device is also provided, the device comprising a buffer layer above a structure layer and a dielectric layer above the buffer layer. The dielectric layer is patterned to form a salicide block above a portion of the structure layer to protect the portion from a subsequent salicidation.
Claims9
A method, comprising:
- providing a silicon-on-insulator structure comprising:
- a bulk substrate;
- a buried insulation layer;
- and
- an active layer;
- forming a polysilicon layer in the active layer of the silicon-on-insulator structure layer;
- forming a buffer layer above the polysilicon layer and at least a portion of the active layer;
- forming a dielectric layer above the buffer layer;
- and
- patterning the dielectric layer and the buffer layer to form a salicide block above the polysilicon layer and the at least a portion of the active layer said salicide block protecting the polysilicon layer and the at least a portion of the active layer from a subsequent salicidation.
Dependencies are inferred from the claim text.