Method of manufacturing a semiconductor device
AssigneeSeiko Instruments Inc.
InventorHiroaki Takasu
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device comprises forming a thin film over a semiconductor substrate, patterning the thin film to define a portion of a laser trimming registration position pattern while simultaneously forming a fuse element formed from the same thin film and separate from the portion of the laser trimming position registration pattern, and forming a metallic film on the portion of the laser trimming position pattern but not on the fuse element.
Claims32
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first insulating film on a silicon substrate;
- forming a gate oxide film in a MOS type transistor area;
- simultaneously forming by one patterning process a dot pattern obtained by processing a thin film in a dot shape in a portion that becomes later a pattern for laser trimming position registration, a polycrystal silicon fuse in a portion that becomes later a fuse element, and a gate electrode formed from said thin film in said MOS type transistor area;
- forming a second insulating film from an NSG film, a PSG film or a BPSG film after a source area and a drain area are formed in said MOS type transistor area and said pattern portion for laser trimming position registration;
- removing said second insulating film from said pattern portion for laser trimming position registration and opening only a contact area in said MOS type transistor area and said fuse element portion;
- forming a metallic film in said MOS type transistor area, said fuse element portion, and said pattern portion for laser trimming position registration;
- etching the metallic film to remove the metallic film from the fuse element portion while leaving a given portion of the metallic film for wiring in said MOS type transistor area and while leaving the metallic film in said pattern portion for laser trimming position registration;
- forming a protective film over the MOS type transistor area, the fuse element portion and the pattern portion for laser trimming position registration;
- and
- patterning the protective film so that the protective film is left in said MOS type transistor area, only an area for irradiating a laser beam is opened in said fuse element portion, and said protective film is removed from said pattern portion for laser trimming position registration.
A method of manufacturing a semiconductor device to facilitate trimming a fuse element arranged relative to a laser trimming position registration pattern, comprising the steps of:
- forming a thin film over a semiconductor substrate;
- patterning the thin film to define a portion of a laser trimming position registration pattern while simultaneously forming a fuse element from the same thin film and separate from the portion of the laser trimming position registration pattern;
- and forming a metallic film on the portion of. the laser trimming position pattern but not on the fuse element.
A method of manufacturing a semiconductor device to facilitate trimming a fuse element arranged relative to a laser trimming position registration pattern, comprising the steps of:
- forming a thin film over a semiconductor substrate;
- patterning the thin film to define a portion of a laser trimming position registration pattern comprised of at least one of a grid, stripe and dot shape of the thin film and selectively arranged to define a high light reflectivity area and a low light reflectivity area;
- simultaneously forming a fuse element from the thin film while patterning the thin film;
- forming a gate oxide film of a MOS type transistor;
- and forming a gate electrode of the MOS type transistor from the thin film.
Dependencies are inferred from the claim text.