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US 6,586,279 B1Granted
Method of integrating a heat spreader and a semiconductor, and package formed thereby
AssigneeSun Microsystems, Inc.
InventorsHoward L. Davidson, Richard Lytel
Life of this patent
Estimating the term…
Abstract
A method of integrating a heat spreader into a semiconductor package includes depositing an adhesion metal layer on the back of a wafer at low temperature. A heat transfer metal layer is subsequently deposited on the adhesion metal layer at low temperature to form a heat spreader.
Claims32
A method of integrating a heat spreader into a semiconductor, comprising:
- depositing an adhesion metal layer on the back of a semiconductor at a temperature of up to approximately 100° C.;
- and
- depositing a heat transfer metal layer on said adhesion metal layer to form a heat spreader.
A method of integrating a heat spreader into a semiconductor, comprising:
- forming a tight inter-molecular bond between an adhesion metal layer and a back of a semiconductor at a temperature of up to approximately 100° C., to produce a low stress tight joint between said adhesion metal layer and said semiconductor;
- and
- forming an inter-metallic bond between a heat transfer metal layer and said adhesion metal layer to form a heat spreader.
Dependencies are inferred from the claim text.