US 6,586,264 B2 · Method of calculating characteristics of semiconductor device having gate electrode and program thereof

Abstract

For a semiconductor device including a gate electrode in an area of part of a surface of a semiconductor substrate, a gate length is determined and to be set as an upper-limit gate length. For a semiconductor device of which a gate length is almost equal to the upper-limit gate length, an impurity implantation condition is determined to calculate a representative impurity concentration distribution. A limit gate length is obtained according to the representative impurity concentration distribution. For a semiconductor device of which a gate length is equal to or greater than the limit gate length and equal to or less than the upper-limit gate length, an impurity concentration distribution of the semiconductor device is calculated according to the representative impurity concentration distribution. Characteristics of the semiconductor device are obtained according to the impurity concentration distribution. This method reduces the period of time to calculate the characteristics of the semiconductor device.

Claims10

Dependent claims

A method of calculating characteristics of a semiconductor device, comprising the steps of:

determining a gate length of a semiconductor device including a gate electrode on or above a partial area of a surface of a semiconductor substrate and setting the gate length determined as an upper-limit gate length;
determining an impurity implantation condition for a semiconductor device of which a gate length is substantially equal to said upper-limit gate length and calculating a representative impurity concentration distribution of the semiconductor device;
obtaining a limit gate length according to said representative impurity concentration distribution;
determining, for a semiconductor device of which a gate length is equal to or greater than said limit gate length and equal to or less than said upper-limit gate length, an impurity concentration distribution of the semiconductor device according to said representative impurity concentration distribution;
and obtaining characteristics of the semiconductor device according to the impurity concentration distribution thus determined.

2 more elements

A program to be executed by a computer, comprising the processing steps of:

inputting an upper-limit gate length of a semiconductor device including a gate electrode on or above a partial area of a surface of a semiconductor substrate;
inputting an impurity implantation condition;
calculating, for a semiconductor device of which a gate length is substantially equal to said upper-limit gate length, a representative impurity concentration distribution under the impurity implantation condition;
obtaining a limit gate length according to said representative impurity concentration distribution;
obtaining, for a semiconductor device of which a gate length is equal to or greater than said limit gate length and equal to or less than said upper-limit length, an impurity concentration distribution of said semiconductor device according to said representative impurity concentration distribution;
and
calculating characteristics of said semiconductor device according to the impurity concentration distribution.

4 more elements

Dependencies are inferred from the claim text.

Method of calculating characteristics of semiconductor device having gate electrode and program thereof

Life of this patent

Method of calculating characteristics of semiconductor device having gate electrode and program thereof

Life of this patent

Abstract

Claims10