Single c-axis PGO thin film electrodes having good surface smoothness and uniformity and methods for making the same

A method of forming an electrode and a ferroelectric thin film thereon, comprising:

• preparing a substrate;
• depositing an electrode on the substrate, wherein the electrode is formed of a material taken from the group of materials consisting of iridium and iridium composites, wherein the iridium composites are taken from the group of composites consisting of IrO2, Ir—Ta—O, Ir—Ti—O, Ir—Nb—O, Ir—Al—O, Ir—Hf—O, Ir—V—O, Ir—Zr—O and Ir—O;
• and
• forming a PGO ferroelectric thin film thereon wherein the ferroelectric thin film exhibits surface smoothness and uniform thickness, including mixing a precursor of lead acetate trihydrate and germanium ethoxide in a Pb/Ge molar ratio of 4-6:3 distilling the mixture to remove the water;
• baking the structure at between about 100 EC to 300 EC;
• and crystallization annealing in an oxygen atmosphere at a temperature of about 500 EC.

A method of forming an electrode and a ferroelectric thin film thereon, comprising:

• preparing a substrate;
• depositing an electrode on the substrate, wherein the electrode is formed of a material taken from the group of materials consisting of iridium and iridium composites;
• and
• forming a ferroelectric thin film thereon wherein the ferroelectric thin film exhibits surface smoothness and uniform thickness, including using a ferroelectric precursor of Pb(TMHD)2 and Ge(ETO)4 at molar ratio at 5:3 and vaporizer temperature of between about 150 EC to 180 EC;
• a substrate temperature of between about 450 EC to 550 EC;
• a chamber pressure of about 5 Torr.;
• and a flow rates for an Ar carrier gas of about 4000 sccm and for an O2 reaction gas of about 2000 sccm.