Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device

A mass production method of a semiconductor integrated circuit device comprising the steps of:

• (a) depositing a Ru-containing film on individual wafers belonging to a group on which first steps of a wafer process are performed;
• (b) removing said Ru-containing film from outer edge portions of a device side or a back side of the individual wafers, on which the Ru-containing film has been deposited;
• and
• (c) subjecting the individual wafers, from which said ruthenium-containing film has been removed, to a lithographic step, an inspection step or a thermal treating step that is common to wafers subjected to said wafer process, and belonging to a group on which lower layer steps are performed in comparison with said first steps.

A mass production method of a semiconductor integrated circuit device comprising the steps of:

• (a) depositing a harmful transition metal-containing film on individual wafers belonging to a group on which first steps of a wafer process are performed;
• (b) removing said harmful transition metal-containing film from outer edge portions of a device side and an entire area of a back side of the individual wafers, on which said harmful transition metal-containing film has been deposited;
• and
• (c) subjecting the individual wafers, from which said harmful transition metal-containing film has been removed, to a lithographic step, an inspection step or a thermal treating step that is common to wafers subjected to said wafer process, and belonging to a group on which lower layer steps are performed in comparison with said first steps.

A mass production method of a semiconductor integrated circuit device comprising the steps of:

• (a) depositing an alkaline earth metal-containing film on individual wafers belonging to a group on which first steps of a wafer process are performed;
• (b) removing said alkaline earth metal-containing film from outer edge portions of a device side or a back side of the individual wafers, on which said alkaline earth metal-containing film has been deposited;
• and
• (c) subjecting the individual wafers, from which said alkaline earth metal-containing film has been removed, to a lithographic step, an inspection step or a thermal treating step that is common to wafers subjected to said wafer process, and belonging to a group on which lower layer steps are performed in comparison with said first steps.

A mass production method of a semiconductor integrated circuit device comprising the steps of:

• (a) depositing a lead-containing film on individual wafers belonging to a group on which first steps of a wafer process are performed;
• (b) removing said lead-containing film from outer edge portions of a device side or a back side of the individual wafers, on which said lead-containing film has been deposited;
• and
• (c) subjecting the individual wafers, from which said lead-containing film has been removed, to a lithographic step, an inspection step or a thermal treating step that is common to wafers subjected to said wafer process, and belonging to a group on which lower layer steps are performed in comparison with said first steps.

A mass production method of a semiconductor integrated circuit device comprising the steps of:

• (a) depositing a transition metal-containing film on individual wafers subjected to a wafer process;
• (b) removing the transition metal-containing film from outer edge portions of a device side and an entire area of a back side of the individual wafers, on which the transition metal-containing film has been deposited;
• (c) transferring the wafers from which the transition metal-containing film has been removed to a common device used in the wafer process;
• (d) removing the transferred individual wafers from the common device;
• and
• (e) transferring further wafers to the common device for the performance of a step or steps of the wafer process before or after the depositing step.