Anti-charging layer for beam lithography and mask fabrication
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsElizabeth Dobisz, Walter J. Dressick, Susan L. Brandow, Mu-San Chen
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Abstract
This invention discloses an anti-charging layer for beam lithography and mask fabrication. This invention reduces beam displacement and increases pattern placement accuracy. The process will be used in the beam fabrication of high-resolution lithographic masks as well as beam direct write lithography of electronic devices. The anti-charging layer is formed by the use of metal films bound to metal ligating self-assembled monolayers (SAMs) as discharge layers.
Claims40
A method of forming anti-charging layer for charged particle beam lithography, comprising:
- binding a ligand self-assembled monolayer (SAM) to a substrate;
- binding a Pd catalyst to said ligand SAM;
- depositing an electroless metal layer on said Pd catalyst in order to create the anti-charging layer, said metal layer being continuous and conductive in order to permit charge dissipation, said metal layer being further transparent in the visible region;
- and
- coating said anti-charging layer with an imaging resist.
A method of forming an anti-charging layer for charged particle beam lithography, comprising:
- applying an imaging resist to a substrate;
- binding a ligand SAM to said imaging resist;
- binding a Pd catalyst to said ligand SAM;
- and
- depositing an electroless metal layer onto said Pd catalyst in order to create the anti-charge layer, said metal layer being continuous and conductive in order to permit charge dissipation, said metal layer being further transparent in the visible region.
A method for forming an anti-charging layer for charged-particle beam lithography, comprising:
- i) binding a first ligand layer to a substrate;
- ii) binding a catalyst to said first ligand layer;
- iii) depositing an electroless metal anticharging layer on said catalyst, said metal anticharging layer being continuous and conductive in order to permit charge dissipation, said metal anticharging layer being further transparent in the visible region;
- iv) applying a polymer imaging resist layer on said anticharging layer;
- v) depositing a second ligand layer on said polymer imaging resist;
- vi) binding a catalyst to said second ligand layer;
- and
- vii) depositing an electroless metal anticharging layer on the catalyst in step vi.
Dependencies are inferred from the claim text.