Photoresist polymers and photoresist compositions containing the same

Abstract

The present invention discloses a photoresist polymer of following formula 1, and a photoresist composition comprising the same: where AC1, AC2, x and y are those defined herein. The photoresist composition has excellent transparency in deep ultraviolet region, etching resistance and heat resistance, and can form a good pattern without a developing step. Accordingly, the photoresist composition can be applied to a high density minute pattern below 0.15 μm (e.g., for fabrication of DRAM over 1G), and efficiently employed for the lithography process using ArF, KrF, VUV, EUV, E-beam and X-ray.

Dependencies are inferred from the claim text.