Silicon based films formed from iodosilane precursors and method of making the same

A method for near atmospheric pressure chemical vapor deposition of a silicon-based film selected from the group consisting of silicon-nitrogen based films, comprising

• (a) introducing into a deposition chamber at about atmospheric pressure:
• (i) substrate:
• (ii) a single source precursor in a vapor state having at least three iodine atoms bound to silicon;
• and
• (iii) at least one nitrogen-containing reactant gas;
• (b) maintaining the substrate at a deposition temperature within the chamber of from about 250° C. to about 600° C. for a period of time sufficient to deposit a silicon-nitrogen based film having less than 5 at % iodide.

A method for near atmospheric pressure chemical vapor deposition of a silicon based film onto a substrate, comprising

• (a) introducing into a deposition chamber at about atmospheric pressure:
• (i) a substrate;
• (ii) a single source precursor in a vapor state having the formula:
• I(4-n)SiXn (I)
• wherein n is 0 or 1 and X is selected from the group consisting of Br, Cl, and Sib;
• and
• (iii) at least one reactant gas;
• (b) providing ultraviolet radiation to the chamber such that the radiation reaches an interface between the substrate and the precursor;
• and
• (c) heating the substrate for a period of time sufficient to deposit a silicon based film on the substrate having less than 5 at % iodide.

A method for near atmospheric pressure chemical vapor deposition of a silicon-based film selected from the group consisting of silicon-nitrogen based films, comprising

• (a) introducing into a deposition chamber at a pressure of about 600 torr to about 1000 torr:
• (i) a substrate;
• (ii) a single source precursor in a vapor state having a formula
• I(4-n)SiXn (I)
• wherein n is 0 or 1 and X is selected from the group consisting of Br, Cl and SiI3;
• and
• (iii) at least one nitrogen-containing reactant gas;
• and
• (b) maintaining the substrate at a deposition temperature within the chamber of from about 250° C. to about 600° C. for a period of time sufficient to deposit a silicon nitrogen based film on a substrate having less than 5 at % iodide.