N-type thiophene semiconductors
AssigneeNorthwestern University
InventorsTobin J. Marks, Antonio Facchetti
Life of this patent
Estimating the term…
Abstract
The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, α,ω-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.
Claims10
An n-type polythiophene composition having the structural formula
- wherein R1, R2 and R3 are selected from the substituent group consisting of fluoroalkyl moieties, CnH2n+1 and where n is about 1-12, H, F and (CH2)aX and where a is about 1-12 and X is selected from the group consisting of amino, hydroxy and carboxylic acid functionalities;
- and x, y and z are integers selected from the group of integers consisting of 1 and integers greater than 1.
An n-type polythiophene composition having the structural formula
- wherein R1, R2 and R3 are selected from the substituent group consisting of fluoroalkyl moieties, CnH2n+1 and where n is about 1-12, H, F and (CH2)aX and where a is about 1-12 and X is selected from the group consisting of amino, hydroxy and carboxylic acid functionalities;
- x and z are integers selected from the group of integers consisting of 1 and integers greater than 1;
- and y is an integer selected from the group of integers consisting of 0 and integers greater than 0, said composition wherein R2 and R3 are not the same fluoroalkyl moieties.
Dependencies are inferred from the claim text.