Semiconductor wafer cleaning method to remove residual contamination including metal nitride particles

A method of removing residual contamination including metal nitride particles from semiconductor wafer surfaces comprising the sequential steps of:

• a) mechanically brushing at least one semiconductor wafer surface of a semiconductor wafer while a first carboxylic acid cleaning solution is supplied to the at least one semiconductor wafer surface;
• b) transferring the semiconductor wafer from the first carboxylic acid cleaning solution to a second carboxylic acid cleaning solution, each of said first and said second carboxylic acid cleaning solutions being selected from the group consisting of at least one of formic acid, acetic acid, propionic acid, valeric acid, malonic acid, succinic acid, glutaric acid, maleic acid, fumaric acid, phthalic acid, glycolic acid, lactic acid, tartaric acid, gluconic acid, and adipic acid;
• c) immersing the semiconductor wafer into the second carboxylic acid cleaning solution, said first and said second carboxylic acid cleaning solutions weakening the adherence of said metal nitride particles to said at least one semiconductor wafer surface;
• and
• d) supplying sonic energy to the second carboxylic acid cleaning solution such that the sonic energy is directed parallel to the at least one semiconductor wafer surface, wherein said steps of brushing and supplying said sonic energy to the semiconductor wafer remove said metal nitride particles from said at least one semiconductor wafer surface.