Subaperture chemical mechanical polishing system

A chemical mechanical polishing system (CMP), comprising:

• a carrier being designed to hold and rotate a substrate at a fixed location, the substrate having a surface to be prepared;
• a primary head having a surface, the primary head being configured to oscillate at a programmable rate while linearly moving over the fixed location of the rotating carrier in one of a first direction beginning at about a center of the surface to be prepared of the substrate to about an edge of the surface to be prepared of the substrate and a second direction beginning at about the edge of the surface to be prepared of the substrate to about the center of the surface to be prepared of the substrate, such that less than an entire portion of the surface of the primary head is configured to be applied to the surface to be prepared of the substrate overlapping at least less than an entire portion of the surface to be prepared of the substrate.

A chemical mechanical polishing system (CMP), comprising:

• a carrier being designed to hold and rotate a substrate at a fixed location, the substrate having a surface to be prepared;
• a primary head having a surface, the primary head being configured to oscillate at a programmable rate while linearly moving over the fixed location of the rotating carrier in a to direction beginning at about a center of the surface to be prepared of the substrate to about an edge of the surface to be prepared of the substrate, such that less than an entire portion of the surface of the primary head is applied to the surface to be prepared of the substrate overlapping less than an entire portion of the surface to be prepared of the substrate.