Method of fabricating a component with crystalline silicon substrate
AssigneeAlcatel
InventorsDenis Tregoat, Claude Artigue, Christian Brot, Franck Mallecot, Francis Poingt
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Abstract
A method of fabricating a component having a crystalline silicon substrate includes the steps of depositing a layer of silica onto a crystalline silicon substrate, this silica layer being doped with dopants, and then treating the substrate. Before the doped silica layer is deposited, a barrier layer is formed on the substrate, consisting of a barrier material opposing diffusion of the dopants. The doped silica layer is deposited onto this barrier layer. The invention finds one particular application in connecting flat bundles of fibers in communication networks.
Claims16
In a method for fabricating a component on a crystalline silicon substrate and for giving a quality to said component, said method comprising the steps of:
- depositing a doped silica layer onto a silicon substrate having a crystal lattice, said doped silica layer being doped with dopants and constituting a bottom confinement layer, said crystal lattice having a quality depending on disruptions therein;
- eliminating said doped silica layer over a region to be treated of said substrate;
- and
- treating said silicon substrate in said region to be treated so that said quality of said component depends on said quality of said crystal lattice in said region to be treated,
- the improvement comprising the additional steps of:
- before said step of depositing said doped silica layer, forming, between said silicon substrate and said doped silica layer, a barrier layer of a barrier material opposing diffusion of said dopants, said barrier material having a lower rate of diffusion of said dopants than silicon;
- and
- after said step of eliminating said doped silica layer and before said step of treating said substrate, eliminating said barrier layer over said region to be treated.
Dependencies are inferred from the claim text.