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US 6,584,135 B2Granted
Vertical cavity surface emitting laser diode and method for manufacturing same
AssigneeOsram Opto Semiconductors GmbH & Co. OHG
InventorTorsten Wipiejewski
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Abstract
A vertical resonator structure with active layer and Bragg reflectors formed in a mesa and provided with an upper contact and a substrate contact. A bond pad for connection to a housing and the upper contact are parts of the same metallization layer that are directly adjacent to one another. For bundling current in the active layer, an aperture can be formed between oxidized regions of an AlGaAs layer. The oxidized regions have at least the dimensions of the bond pad which are for example, 90 μm and at least approximately 50 μm.
Claims11
A vertical cavity surface emitting laser diode (VCSEL), comprising:
- a first reflector provided for fashioning a vertical resonator;
- a second reflector;
- an active layer configured between the first reflector and the second reflector;
- and
- an electrically conductive contacting layer comprising at least one contact on a top side of the VCSEL provided for radiation exit, the at least one contact being configured for an injection of current, the contact comprising a bond pad for electrical connection.
2 more elements
Dependencies are inferred from the claim text.