Multiple semiconductor laser structure with narrow wavelength distribution

A multiple semiconductor laser structure, comprising:

• a plurality of laser pn junctions stacked vertically one on top of another and each having an active, light-emitting zone, said laser pn junctions each having an n region and a p region, said active, light-emitting zone of said laser pn junctions each having a material composition and a given thickness, at least one of said material composition and said given thickness matching one another to compensate for an influence of different operating temperatures on an emission wavelength during operation;
• a n+p+ tunnel junction disposed between and separating each pair of vertically neighboring ones of said laser pn junctions, said n+p+ tunnel junction having an n+-doped layer and a p+-doped layer, said n+-doped layer adjoining said n region of one of said laser pn junctions and said p+-doped layer adjoining said p region of another one of said laser pn junctions, a n+-doping concentration and a p+-doping concentration of said n+-doped layer and said p+-doped, respectively, chosen such that a relatively low electrical resistance of said n+p+ tunnel junction being obtained during operation;
• a first contact metallization disposed on said p region of one of said laser pn junctions;
• and
• a second contact metallization disposed on said n region of another of said laser pn junctions.