Semiconductor integrated circuit device
AssigneesHitachi, Ltd., Hitachi Device Engineering Co., Ltd.
InventorsHiroki Fujisawa, Kazuhiko Kajigaya, Kenichi Fukui, Toshikazu Tachibana
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AssigneesHitachi, Ltd., Hitachi Device Engineering Co., Ltd.
InventorsHiroki Fujisawa, Kazuhiko Kajigaya, Kenichi Fukui, Toshikazu Tachibana
Estimating the term…
In a semiconductor integrated circuit in which an internal voltage generation circuit operating on a power supply voltage supplied through an external terminal forms either or both of a low voltage and a boosted voltage to operate internal circuits, a first internal circuit operating on the power supply voltage supplied through the external terminal or the boosted voltage formed by the internal voltage generation circuit is constituted by a first MOSFET with a gate insulation film having a large thickness adapted to the power supply voltage or boosted voltage, and a second internal circuit operating on the low voltage is constituted by a second MOSFET with a gate insulation film having a small thickness adapted to the low voltage.
A semiconductor integrated circuit comprising:
Dependencies are inferred from the claim text.