US 6,583,830 B2 · Electrooptical device, projection-type display apparatus, and method for manufacturing the electrooptical device

Abstract

The present invention provides an electrooptical device wherein in a thin-film transistor (TFT) array substrate of the electrooptical device, a scanning line, a drain electrode, a first light shield layer, and a data line are laminated over a channel region of a TFT and a second light shield layer is laminated beneath the channel region. A side wall formation trench is formed beside the channel region of the TFT, and in the side wall formation trench a conductive layer having a light shield property is concurrently formed with the first light shield layer thereby a light shield side wall is formed. By three-dimensionally blocking the entry of light towards the channel region, obliquely or laterally incident light is prevented from entering the channel region of a pixel switching TFT, and the TFT is free from erratic operations and reliability degradation.

Claims19

Dependent claims

An electrooptical device, comprising:

a first substrate;
a pixel electrode arranged above the first substrate;
a thin-film transistor arranged above the first substrate and connected to the pixel electrode;
and
a first light shield layer arranged over a gate electrode of the thin-film transistor formed over and facing a channel region of the thin-film transistor with a gate insulator disposed therebetween, the first light shield layer being formed of a conductive layer;
and
the first light shield layer being formed laterally surrounding the channel region as a light shield side portion.

4 more elements

A method for manufacturing an electrooptical device including a first substrate, a pixel electrode arranged on the first substrate, and a thin-film transistor arranged on the first substrate and coupled to the pixel electrode, the method comprising:

forming, on the surface of the first substrate, the thin-film transistor including a channel region, a gate insulator formed on the channel region, and a gate electrode on the gate insulator, with the gate electrode facing the channel region with the gate insulator disposed therebetween,
depositing at least one interlayer insulator covering the thin-film transistor subsequent to the formation of the thin-film transistor,
forming, in the interlayer insulator, a side portion formation trench that extends along the side of the channel region of the thin-film transistor, and depositing a first light shield layer covering at least the channel region of the thin-film transistor, wherein the first light shield layer is also deposited in the side portion formation trench as a light shield side portion when the first light shield layer is formed.

Dependencies are inferred from the claim text.

Facts

Application

09/985,907Filed 6 Nov 2001 · continuation

Priority

JP 2000-12145421 Apr 2000

Published

US 2002/0057403 A116 May 2002

Granted

24 Jun 2003

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

G02F 1/136209
Active matrix addressed cells: light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally…
H10D 30/6723
Having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device: having…
G02F 1/133553
Structural association of cells with optical devices, e.g. polarisers or reflectors: reflecting elements
G02F 1/136227
Active matrix addressed cells: through-hole connection of the pixel electrode to the active element through an insulation layer

Electrooptical device, projection-type display apparatus, and method for manufacturing the electrooptical device

Life of this patent

Electrooptical device, projection-type display apparatus, and method for manufacturing the electrooptical device

Life of this patent

Abstract

Claims19