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AssigneeHitachi, Ltd.
InventorsMari Nozoe, Hiroyuki Shinada, Kenji Watanabe, Keiichi Saiki, Aritoshi Sugimoto, Hiroshi Morioka, Maki Tanaka, Hiroshi Miyai
Estimating the term…
In order to obtain optimum irradiation conditions of an electron beam according to the material and structure of a circuit pattern to be inspected and the kind of a failure to be detected and inspect under the optimum conditions without delay of the inspection time, an inspection device for irradiating the electron beam 19 to the sample board 9 which is a sample, detecting generated secondary electrons by the detector 7, storing obtained signals sequentially in the storage, comparing the same pattern stored in the storage by the comparison calculation unit, and extracting a failure by comparing the predetermined threshold value with the comparison signal by the failure decision unit is provided, wherein the optimum value of the irradiation energy is stored in the data base inside the device beforehand according to the structure of a sample and a recommended value of the irradiation energy suited to inspection can be searched for by inputting or selecting the irradiation energy by a user or inputting information regarding the structure of an article to be inspected.
A circuit pattern inspection method including a step of scanning a board surface with a circuit pattern formed thereon with an electron beam, a step of detecting secondary charged particles generated from said board surface by scanning said board surface with said electron beam, a step of forming an electron beam image of said board surface from said detected secondary charged particles, a step of storing said electron beam image, a step of forming and storing electron beam images of areas neighboring said board, a step of comparing said electron beam images of said areas neighboring said board, and a step of deciding a failure of said circuit pattern on said board from comparison results, wherein said method identifies an item indicating the state of said circuit pattern to be inspected on an operation screen, confirms the contrast of an electron beam image corresponding to it, obtains and stores electron beam irradiation conditions including an electron beam voltage, displays said state of said circuit pattern to be inspected on said operation screen, selects said electron beam irradiation conditions using said electron beam irradiation conditions stored on said displayed screen, irradiates and scans said electron beam to said circuit pattern to be inspected under said electron beam irradiation conditions once, forms an electron beam image, and executes the inspection.
A circuit pattern inspection method having a step of scanning a board surface with a pattern formed on a sample with an electron beam, a step of detecting secondary charged particles generated from said board surface by scanning said board surface with said electron beam, a step of forming an electron beam image of said board surface from said detected secondary charged particles, and a step of storing said electron beam image and including a step of deciding a failure from said stored image, wherein said method includes a step of determining electron beam irradiation conditions according to a pattern to be inspected;
A circuit pattern inspection method having a step of scanning a board surface with a pattern formed on a sample with an electron beam, a step of detecting secondary charged particles generated from said board surface by scanning said board surface with said electron beam, a step of forming an electron beam image of said board surface from said detected secondary charged particles, and a step of storing said electron beam image and including a step of deciding a failure from said stored image, wherein said method includes a step of determining electron beam irradiation conditions according to a pattern to be inspected;
Dependencies are inferred from the claim text.