Electron emitting apparatus
AssigneeCanon Kabushiki Kaisha
InventorDaisuke Sasaguri
Life of this patent
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Abstract
An electron emitting apparatus that can realize a convergence of electron trajectories and an improved electron emission efficiency. The apparatus comprises a substrate having a first primary surface that is substantially planar, an electron emitting device comprising first and second electroconductive members disposed on the primary surface and at an interval from one another, and an anode electrode having a substantially planar surface opposite to the first primary surface. A voltage applying means of the apparatus applies a potential higher than a potential applied to the first electroconductive member to the second electroconductive member to irradiate electrons emitted from the electron emitting device onto the anode electrode.
Claims14
An electron emitting apparatus, comprising:
- (A) a substrate having a first primary surface which is substantially plane;
- (B) an electron emitting device disposed on said first primary surface, comprising a first electroconductive member and a second electroconductive member, wherein a gap is formed between said first electroconductive member and said second electroconductive member;
- (C) an anode electrode having a substantially plane surface opposite to said first primary surface;
- (D) voltage applying means for applying a potential higher than a potential applied to said first electroconductive member to said second electroconductive member in order to emit electrons from said electron emitting device;
- and
- (E) voltage applying means for applying a potential higher than the potential applied to said second electroconductive member in order to irradiate the electrons emitted from said electron emitting device onto said anode electrode;
- wherein a through-hole that penetrates said second electroconductive member is defined in a part of said second electroconductive member which exists within a range from the gap to a distance Xs represented by the following expression (1), an electroconductive member to which a potential lower than said second electroconductive member is applied is disposed under said through-hole;
- and
- Xs=H×Vf/(π×Va) (1)
- where H is a distance between a plane of said anode electrode and said first primary surface, Vf is a voltage applied between said first electroconductive member and said second electroconductive member, Va is a voltage applied between said anode electrode and said first electroconductive member, and π is the ratio of the circumference of a circle to its diameter.
Dependencies are inferred from the claim text.