Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument
AssigneeSeiko Epson Corporation
InventorNobuaki Hashimoto
Life of this patent
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Abstract
A semiconductor device comprising: a semiconductor element having a plurality of electrodes; a passivation film formed on the semiconductor element in a region avoiding at least a part of each of the electrodes; a conductive foil provided at a given spacing from the surface on which the passivation film is formed; an external electrodes formed on the conductive foil; intermediate layer formed between the passivation film and the conductive foil to support the conductive foil; and wires electrically connecting the electrodes to the conductive foil; wherein a depression tapered in a direction from the conductive foil to the passivation film if formed under a part of the conductive foil that includes the connection with the external electrodes.
Claims39
A semiconductor device comprising:
- a semiconductor element that includes a plurality of electrodes;
- a passivation film formed on a surface of the semiconductor element in a region avoiding at least a part of each of the electrodes;
- a metal layer having its first portions electrically connected to the electrodes and having its second portions formed at a given spacing from the surface on which the passivation film is formed;
- external electrodes formed on the second portions of the metal layer;
- and
- an intermediate layer formed between the passivation film and the second portions of the metal layer to support the second portions,
- wherein a depression opening between one of the second portions to the passivation film is formed in the intermediate layer under a part of one of the second portions that includes the connection with one of the external electrodes.
A method of manufacturing a semiconductor device, comprising the steps of:
- providing a semiconductor element that includes a plurality of electrodes and a passivation film that is formed on a surface of the semiconductor element in a region avoiding at least a part of each of the electrodes;
- forming an intermediate layer on the passivation film;
- forming a metal layer having its first portions electrically connected to the electrodes and having its second portions on the intermediate layer;
- forming a depression opening between one of the second portions to the passivation film in the intermediate layer;
- forming external electrodes on the second portions of the metal layer in a position above the depression opening.
Dependencies are inferred from the claim text.