Semiconductor device with a binary alloy bonding layer
AssigneesNEC Corporation, Mitsubishi Denki Kabushiki Kaisha, Kabushiki Kaisha Toshiba
InventorsMasamoto Tago, Yoshihiro Tomita, Kenji Takahashi
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Abstract
A semiconductor device includes a semiconductor chip. A substrate is arranged in opposition to the semiconductor chip. A first electrode is placed on the semiconductor chip while a second electrode is placed on the substrate. Each of the first and second electrodes is made of the same electrode material. An intermetallic compound layer is formed between the first electrode and the second electrode. The intermetallic compound layer is entirely a binary alloy of the electrode material and a bonding material that was applied to at least one of the first and second electrodes.
Claims15
A semiconductor device, comprising:
- a semiconductor chip with a first electrode thereon;
- and
- a substrate with a second electrode thereon,
- wherein said first and second electrodes are the same electrode material, and
- wherein said first and second electrodes are bonded to each other with only a single intermetallic compound layer between said first and second electrodes, the single intermetallic compound layer being a binary alloy of the electrode material and a bonding material.
A semiconductor device, comprising:
- a semiconductor chip with a first electrode thereon;
- and
- a substrate with a second electrode thereon,
- wherein said first and second electrodes are the same electrode material, and
- wherein said first and second electrodes are bonded to each other with only plural intermetallic compound layers between said first and second electrodes, the intermetallic compound layers being a binary alloy of the electrode material and a bonding material.
Dependencies are inferred from the claim text.