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US 6,583,492 B2Granted
Capacitor element having a contact hole structure in an electrode structure
AssigneeNEC Electronics Corporation
InventorKazutaka Otsuki
Life of this patent
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Abstract
A semiconductor device comprising a first electrode and a second electrode that are formed in this order on a semiconductor substrate with an insulating layer interposed between the first and second electrodes. A contact hole is provided for connecting the second electrode to a wiring layer formed above the second electrode, the contact hole being formed at a position above a separated region of the first electrode formed separately from a main region of the first electrode.
Claims6
A semiconductor device comprising:
- a semiconductor substrate;
- a first electrode and a second electrode formed in this order on said semiconductor substrate;
- an insulating layer interposed between said first and second electrodes,
- wherein a contact hole is provided for connecting said second electrode to a wiring layer formed above said second electrode, said contact hole being formed at a position above a separated region of said first electrode formed separately from a main region of said first electrode.
1 more element
Dependencies are inferred from the claim text.