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AssigneeSony Corporation
InventorsYoshiaki Hagiwara, Hideaki Kuroda, Michitaka Kubota, Akira Nakagawara
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A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an opening reaching the impurity region, and a second insulating film and a second semiconductor layer of a second conductivity type stacked in the opening.
A semiconductor nonvolatile memory device having at least one memory cell, wherein the memory cell comprises
A semiconductor nonvolatile memory device having at least one memory cell, wherein the memory cell comprises
A semiconductor nonvolatile memory device having at least one memory cell, wherein the memory cell comprises
Dependencies are inferred from the claim text.