Power component bearing interconnections
AssigneeSTMicroelectronics S.r.l.
InventorMathieu Roy
Life of this patent
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Abstract
A power component formed in an N-type silicon substrate delimited by a P-type wall, having a lower surface including a first P-type region connected to the wall, and an upper surface including a second P-type region, a conductive track extending above the substrate between the second region and the wall. The component includes a succession of trenches extending in the substrate under the track and perpendicularly to this track, each trench being filled with an insulator.
Claims52
A high voltage component formed in a region of a silicon substrate of a first conductivity type delimited by a wall of the second conductivity type, having a lower surface including a first region of the second conductivity type connected to the wall, and an upper surface including at least one second region of the second conductivity type, a high voltage being likely to exist between the first and second regions and having to be withstood on the upper surface side by the junction between the second region and the substrate or by the junction between the wall and the substrate, a conductive track being likely to be at a high potential extending above the substrate between the second region and the wall,
- an insulating layer disposed under the track and above the substrate, and
- a succession of trenches extending in the substrate, perpendicular to the track, to a depth less than a depth of the second region, each trench being contiguous with the insulating layer and being filled with an insulator.
A semiconductor device, comprising:
- a substrate formed in a region of a first conductivity type;
- a first surface region, disposed on a first side of the substrate, comprising a first region of a second conductivity type;
- a second surface region, disposed on a second side of the substrate, comprising a second region of the second conductivity type;
- a wall, formed of the second conductivity type, for delimiting the substrate;
- an insulating layer, disposed on the second surface region;
- wherein the insulating layer comprises a plurality of extensions in the form of trenches, contiguous with the insulating layer, and extending into the substrate to a depth less than a depth of the second region.
A semiconductor component, comprising:
- a substrate of a first conductivity type having a first surface;
- a wall of a second conductivity type delimiting a periphery of the component within the substrate and extending to the first surface;
- a first region of the second conductivity type formed in the substrate within the periphery of the component and extending to the first surface;
- and
- at least one trench of insulating material formed in the substrate between the wall and the first region and extending to the first surface, a maximum depth of the at least one trench being less than a maximum depth of the first region.
Dependencies are inferred from the claim text.