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US 6,583,481 B2Granted
Electrostatic-erasing abrasion-proof coating and method for forming the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorKenji Itoh
Life of this patent
Estimating the term…
Abstract
An abrasion-proof and static-erasing coating is formed on the contact surface of a contact image sensor. The coating comprises a first film having a high hardness and a low conductivity, a second film formed on the first film and having a low hardness and a high conductivity, and a third film having a high hardness and a high resistivity providing an abrasion-proof insulating external surface.
Claims50
A device comprising:
- a semiconductor device;
- an organic resin film formed over said semiconductor device;
- a carbon film formed on said organic resin film,
- wherein said carbon film has C—C bonds and contains boron.
1 more element
A device comprising:
- a semiconductor device;
- an organic resin film formed over said semiconductor device;
- a carbon film comprising amorphous carbon formed on said organic resin film,
- wherein said carbon film has C—C bonds and contains boron.
1 more element
A device comprising:
- a semiconductor device;
- an organic resin film formed over said semiconductor device;
- a carbon film formed on said organic resin film,
- wherein said carbon film has C—C bonds.
1 more element
A device comprising:
- a semiconductor device;
- an organic resin film formed over said semiconductor device;
- a first carbon film formed on said organic resin film;
- and
- a second carbon film formed on said first carbon film,
- wherein said second carbon film has a different resistivity from said first carbon film.
3 more elements
A device comprising:
- a semiconductor device formed on a glass substrate;
- an organic resin film formed over said semiconductor device;
- a carbon film comprising amorphous carbon formed on said organic resin film.
A device comprising:
- a semiconductor device formed on a glass substrate;
- an organic resin film formed over said semiconductor device;
- a carbon film formed on said organic resin film,
- wherein said carbon film has C—C bonds.
1 more element
A device comprising:
- a semiconductor device;
- an organic resin film formed over said semiconductor device;
- a carbon film formed on said organic resin film,
- wherein said carbon film has C—C bonds and contains nitrogen.
1 more element
A device comprising:
- a semiconductor device;
- an organic resin film formed over said semiconductor device;
- a carbon film comprising amorphous carbon formed on said organic resin film,
- wherein said carbon film has C—C bonds and contains nitrogen.
1 more element
A device comprising:
- a semiconductor device;
- an organic resin film formed over said semiconductor device;
- a carbon film formed on said organic resin film,
- wherein said carbon film has C—C bonds and contains phosphorus.
1 more element
A device comprising:
- a semiconductor device;
- an organic resin film formed over said semiconductor device;
- a carbon film comprising amorphous carbon formed on said organic resin film,
- wherein said carbon film has C—C bonds and contains phosphorus.
1 more element
Dependencies are inferred from the claim text.