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US 6,583,478 B2Granted
Transfer circuit of semiconductor device and structure thereof
AssigneeSamsung Electronics Co., Ltd.
InventorSung-Hoi Hur
Life of this patent
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Abstract
A semiconductor transfer circuit and a structure thereof are provided. The transfer circuit and the structure thereof include a stack gate MOS transistor having first and second gate electrodes that are sequentially stacked and a control MOS transistor connected to the stack gate MOS transistor. A drain of the control MOS transistor is connected to the first gate electrode.
Claims8
A transfer circuit of a semiconductor device having a substrate, the transfer circuit connected to a data signal line, the transfer circuit comprising:
- a stack gate MOS transistor having a source region that is connected to the data signal line, and first and second gate electrodes that are sequentially stacked;
- and
- a control MOS transistor having a drain region that is connected to the first gate electrode,
- the stack gate MOS transistor and the control MOS transistor being formed at first and second active regions that are laterally spaced apart from one another with device isolation layer patterns extending therebetween.
1 more element
A transfer circuit structure of a semiconductor device, comprising:
- a device isolation layer formed at a predetermined region of a semiconductor substrate, the device isolation layer defining first and second active regions;
- a control MOS transistor formed at the first active region;
- a stack gate MOS transistor having first and second gate electrodes that are sequentially stacked, the stack gate MOS transistor being formed at the second active region;
- and
- a local interconnection for electrically connecting a drain region of the control MOS transistor to the first gate electrode.
2 more elements
Dependencies are inferred from the claim text.