Back to results
US 6,583,472 B1Granted
Semiconductor device and method of manufacturing thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHiroshi Shibata, Atsuo Isobe
Life of this patent
Estimating the term…
Abstract
To provide a liquid crystal display device having high quality display by obtaining a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a different layer from a gate electrode and the capacitor wiring is arranged so as to be parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of a neighboring pixel can be avoided, whereby obtaining satisfactory display images.
Claims80
A semiconductor device comprising:
- a first wiring on an insulating surface;
- a first insulating film on said first wiring;
- a semiconductor film on said first insulating film;
- a second insulating film on said semiconductor film;
- a second wiring, and a gate electrode which is connected to said first wiring, both formed on said second insulating film;
- a third insulating film on said second wiring and said gate electrode;
- and
- a third wiring connected to said semiconductor film over said third insulating film.
5 more elements
A semiconductor device comprising:
- a first wiring on an insulating surface;
- a first insulating film over said first wiring;
- a semiconductor layer over said first insulating film;
- a second insulating film on said semiconductor layer;
- a second wiring on said second insulating film;
- a gate electrode on said second insulating film, said gate electrode electrically connected to said first wiring in a pixel portion;
- a third insulating film on said second wiring and said gate electrode;
- and
- a third wiring over said third insulating film, said third wiring electrically connected to said semiconductor layer.
6 more elements
A semiconductor device comprising:
- a first wiring on an insulating surface;
- a first insulating film over said first wiring;
- a semiconductor layer over said first insulating film;
- a second insulating film on said semiconductor layer;
- a second wiring on said second insulating film;
- a gate electrode on said second insulating film, said gate electrode electrically connected to said first wiring in a pixel portion;
- a third insulating film on said second wiring and said gate electrode;
- and
- a third wiring over said third insulating film, said third wiring electrically connected to said semiconductor layer, and extending in parallel to said second wiring.
6 more elements
A semiconductor device comprising:
- a first wiring on an insulating surface;
- a first insulating film over said first wiring;
- a semiconductor layer over said first insulating film;
- a second insulating film on said semiconductor layer;
- a second wiring on said second insulating film;
- a gate electrode on said second insulating film, said gate electrode electrically connected to said first wiring in a pixel portion;
- a third insulating film on said second wiring and said gate electrode;
- a third wiring over said third insulating film, said third wiring electrically connected to said semiconductor layer;
- a fourth insulating film on said third wiring;
- and
- a light shielding layer on said fourth insulating film.
8 more elements
A semiconductor device comprising:
- a first wiring on an insulating surface;
- a first insulating film over said first wiring;
- a semiconductor layer over said first insulating film;
- a second insulating film on said semiconductor layer;
- a second wiring on said second insulating film;
- a gate electrode on said second insulating film, said gate electrode electrically connected to said first wiring in a pixel portion;
- a third insulating film on said second wiring and said gate electrode;
- and
- a third wiring over said third insulating film, said third wiring electrically connected to said semiconductor layer;
- a fourth insulating film over said third wiring;
- and
- a pixel electrode over said fourth insulating film, said pixel electrode electrically connected to said semiconductor layer.
9 more elements
The semiconductor device according to claim wherein 47, the first wiring is arranged in a direction orthogonal to the second wiring.
A semiconductor device comprising:
- a scanning line over a substrate;
- a first insulating film on said first wiring;
- a semiconductor layer on said first insulating film;
- a second insulating film on said semiconductor layer;
- a capacitor wiring on said second insulating film;
- a gate electrode on said second :insulating film, said gate electrode electrically connected to said scanning line;
- a third insulating film on said capacitor wiring and said gate electrode;
- and
- a signal line connected to said semiconductor layer over;
- said third insulating film.
7 more elements
A semiconductor device comprising:
- a scanning line over a substrate;
- a first insulating film on said first wiring;
- a semiconductor layer on said first insulating film;
- a second insulating film on said semiconductor layer,
- a capacitor wiring on said second insulating film;
- a gate electrode on said second insulating film, said gate electrode electrically connected to said scanning line;
- a third insulating film on said capacitor wiring and said gate electrode;
- and
- a signal line connected to said semiconductor layer over said third insulating film and extending in parallel to said capacitor wiring.
6 more elements
A semiconductor device comprising:
- a scanning line over a substrate;
- a first insulating film on said first wiring;
- a semiconductor layer on said first insulating film;
- a second insulating film on said semiconductor layer;
- a capacitor wiring on said second insulating film;
- a gate electrode on said second insulating film, said gate electrode electrically connected to said scanning line in a pixel portion;
- a third insulating film on said capacitor wiring and said gate electrode;
- and
- a signal line connected to, said semiconductor layer over said third insulating film.
6 more elements
A semiconductor device comprising:
- a scanning line over a substrate;
- a first insulating film on said first wiring;
- a semiconductor layer on said first insulating film;
- a second insulating film on said semiconductor layer;
- a capacitor wiring on said second insulating film;
- a gate electrode on, said second insulating film, said gate electrode electrically connected to said scanning line in a pixel portion;
- a third insulating film on said capacitor wiring and said gate electrode;
- and
- a signal line connected to said semiconductor layer over said third insulating film and extending in parallel to said capacitor wiring.
6 more elements
Dependencies are inferred from the claim text.