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US 6,583,471 B1Granted
Semiconductor device having first and second insulating films
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hideomi Suzawa, Hirokazu Yamagata
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Abstract
In order to increase an aperture ratio, a part of or all of a gate electrode that overlaps with channel formation regions (213, 214) of a pixel TFT is caused to overlap with second wirings (source line or drain line) (154, 157). Additionally, a first interlayer insulating film (149) and a second interlayer insulating film (150c) are disposed between the gate electrode and the second wirings (154, 157) so as to decrease a parasitic capacitance.
Claims34
A semiconductor device comprising:
- a substrate;
- at least one thin film transistor formed over said substrate, said thin film transistor having at least one gate electrode and a gate insulating film;
- a first interlayer insulating film formed over said thin film transistor;
- a second interlayer insulating film formed on a part of said first interlayer insulating film;
- a conductive layer formed on said second interlayer insulating film;
- and
- a contact hole formed through the gate insulating film and said first interlayer insulating film without being formed through said second interlayer insulating film;
- wherein said conductive layer is contacted to an impurity region of the thin film transistor through said contact hole;
- and
- wherein said conductive layer overlaps with said gate electrode with said first and second interlayer insulating films interposed therebetween.
7 more elements
A semiconductor device comprising:
- a substrate;
- at least one thin film transistor formed over said substrate, said thin film transistor having at least one gate electrode and a gate insulating film;
- a first interlayer insulating film formed over said thin film transistor;
- a second interlayer insulating film formed on a part of said first interlayer insulating film;
- wherein the gate insulating film and said first interlayer insulating film extend beyond a side edge of said second interlayer insulating film;
- a conductive layer formed on said second interlayer insulating film;
- and
- a contact hole formed through said gate insulating film and said first interlayer insulating film;
- wherein said contact hole is formed in the extending portion of said gate insulating film and said first interlayer insulating film;
- wherein said conductive layer contacts with an impurity region of the thin film transistor through said contact hole;
- and
- wherein said conductive layer overlaps said gate electrode with said first and second interlayer insulating films interposed therebetween.
9 more elements
A semiconductor device comprising:
- a substrate;
- at least one thin film transistor formed over said substrate, said thin film transistor having at least one gate electrode;
- a first interlayer insulating film formed over said thin film transistor;
- a conductive layer formed over said first interlayer insulating film and connected to an impurity region of said thin film transistor;
- a second interlayer insulating film formed over said conductive layer, said second interlayer insulating film having a contact hole;
- and
- a pixel electrode formed over said second interlayer insulating film connected to said conductive layer through the contact hole,
- wherein said conductive layer overlaps said at least one gate electrode, and said contact hole overlaps said at least one gate electrode.
5 more elements
A semiconductor device comprising:
- a substrate;
- at least one thin film transistor formed over said substrate, said thin film transistor having at least one gate electrode;
- a first interlayer insulating film formed over said thin film transistor;
- a conductive layer formed over said first interlayer insulating film and connected to an impurity region of said thin film transistor;
- a second interlayer insulating film formed over said conductive layer, said second interlayer insulating film having a contact hole;
- and
- a pixel electrode formed over said second interlayer insulating film connected to said conductive layer through the contact hole,
- wherein said conductive layer overlaps said at least one gate electrode, and said contact hole is located on an overlapping portion of the conductive layer.
5 more elements
Dependencies are inferred from the claim text.