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US 6,583,468 B2Granted
Semiconductor element
AssigneeNGK Insulators, Ltd.
InventorsYuji Hori, Tomohiko Shibata, Osamu Oda, Mitsuhiro Tanaka
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Abstract
An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 1011/cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 1010/cm2 or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.
Claims11
A semiconductor element, comprising:
- a substrate;
- an underlayer, epitaxially grown on said substrate, comprising a first semiconductor nitride including at least elemental Al, said underlayer having a dislocation density of 1011/cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum of an X-ray rocking curve at (002) reflection;
- and
- a conductive layer, epitaxially grown on said underlayer, comprising a second semiconductor nitride including at least one element selected from the group consisting of Al, Ga and In, said conductive layer having a dislocation density of 1010/cm2 or below and a crystallinity of 150 seconds or below in full width at half maximum of an X-ray rocking curve at (002) reflection.
1 more element
Dependencies are inferred from the claim text.