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US 6,583,467 B2Granted
Semiconductor integrated circuit device
AssigneeHitachi, Ltd.
InventorsToshiaki Nishimoto, Takashi Aoyagi, Shogo Kiyota
Life of this patent
Estimating the term…
Abstract
In the semiconductor integrated circuit device, an AND-type flash memory is formed on a substrate in which stripe-like element separation regions 5 are formed and active regions L sandwiched between the element separation regions 5 are formed like stripes. A silicon monocrystal substrate containing nitrogen or carbon is used as the semiconductor substrate, to reduce dislocation defects and junction leakages so that the reliability and yield are improved.
Claims12
A semiconductor integrated circuit device comprising:
- stripe-like grooves formed in a semiconductor substrate;
- insulating films embedded in said grooves and constructing element separations regions;
- a conductive film serving as a gate electrode of an MIS-type element, and formed on a main surface of said semiconductor substrate;
- and
- semiconductive regions formed in self alignment with said conductor film in a stripe-like active region formed between said element separation regions, and serving as source/drain regions of said MIS-type element,
- wherein a silicon substrate into which a light element having a smaller mass number than silicon is introduced is used as said semiconductor substrate,
- said light element is nitrogen or carbon, and
- said plurality of MIS-type elements are formed in said stripe-like active region.
5 more elements
The semiconductor integrated circuit device comprising:
- stripe-like grooves formed in a semiconductor substrate;
- insulating films embedded in said grooves and constituting element separation regions;
- a conductive film serving as a gate electrode of an MIS-type element, and formed on a main surface of said semiconductor substrate;
- and
- semiconductor regions formed in self alignment with said conductor film in a stripe-like active region formed between said element separation regions, and serving as source/drain regions of said MIS-type element,
- wherein a silicon substrate into which a light element having a smaller mass number than silicon is introduced is used as said semiconductor substrate,
- wherein said light element is nitrogen or carbon, and
- wherein said stripe-like active region has a longer edge which is 100 or more times longer than a shorter edge.
5 more elements
Dependencies are inferred from the claim text.