Semiconductor integrated circuit device with information storage capacitor having ruthenium dioxide lower electrode and crystallized TA2O5 capacitor insulator

A semiconductor integrated circuit device including:

• a memory cell comprising a memory cell selecting MISFET, formed on a main surface of a semiconductor substrate, and an information storage capacitor, said information storage capacitor connected in series to said memory cell selecting MISFET and having a lower electrode, a capacitor insulator on said lower electrode and an upper electrode,
• wherein said lower electrode is made of a conductive material containing ruthenium dioxide (RuO2) as principal ingredient and has a surface roughness (as expressed in terms of the center line average roughness:
• Ra), of the surface upon which the capacitor insulator is provided, of 1 nm or less;
• and
• wherein said capacitor insulator is made of a first crystallized tantalum pentoxide (Ta2O5) layer annealed at a temperature of 750° C.-800° C. in a first tantalum pentoxide annealing and a second crystallized tantalum pentoxide (Ta2O5) layer annealed at a temperature of 750° C.-800° C. after the first tantalum pentoxide layer annealing.