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US 6,583,455 B1Granted
Fabrication of low resistance, non-alloyed, OHMIC contacts to INP using non-stoichiometric INP layers
AssigneeHRL Laboratories, LLC
InventorsMiroslav Micovic, Daniel P. Docter
Life of this patent
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Abstract
A method of reducing the specific contact resistivity of a metal to semiconductor interface between a metal contact and an InP semiconductor compound. The method includes the step of increasing the amount of the group V element (P) in the semiconductor compound so that the semiconductor compound is non-stoichiometric having an excess concentration of the group V element in an amount of at least 0.1% above stoichiometric levels.
Claims42
A metal semiconductor contact comprising:.
- a non-stoichiometric epitaxial InP semiconductor compound layer having at least a 0.1% excess phosphorous compared to stoichiometric InP;
- and
- a metal contact formed on the InP semiconductor compound layer, the InP semiconductor compound layer being substantially free of a dopant in a region thereof immediately adjacent the metal contact.
A metal semiconductor contact comprising:
- a non-stoichiometric epitaxial InP semiconductor compound layer having at least a 0.1% excess phosphorous compared to stoichiometric InP;
- and
- an ohmic metal contact formed on the InP semiconductor compound layer, the InP semiconductor compound layer being substantially free of a dopant in a region thereof immediately adjacent the metal contact.
A metal semiconductor contact comprising:
- a non-stoichiometric epitaxial InP semiconductor compound layer having at least a 0.1% excess phosphorus compared to stoichiometric InP;
- and
- a metal contact formed on the InP semiconductor compound layer, the InP semiconductor compound layer having a dopant concentration, in a region thereof immediately adjacent the metal contact, between 0 to less than 1019 cm−3.
Dependencies are inferred from the claim text.