Semiconductor device having a voltage-regulator device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHirotsugu Honda, Masafumi Doi
Life of this patent
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Abstract
A semiconductor device providing an improved effect of suppressing variation with time of reverse breakdown voltage applied to PN junction, particularly, a voltage-regulator device, is provided. The semiconductor device includes an impurity diffusion layer 15 formed on a surface of a certain-conductivity-type semiconductor substrate or well, the impurity diffusion layer having a conductivity opposite to that of the semiconductor substrate or well, and a device separating insulation film 12 formed at a distance from the impurity diffusion layer, and a distance between an end of the impurity diffusion layer and an end of the device separating insulation film is defined to be not less than 1.2 μm.
Claims8
A semiconductor device, comprising:
- an impurity diffusion layer formed on a surface of a certain-conductivity-type semiconductor substrate or well, the impurity diffusion layer having a conductivity opposite to that of the semiconductor substrate or well;
- a device separating insulation film formed at a distance from the impurity diffusion layer;
- and
- an electrode formed thereon via a thin insulation film, the thin insulation film being at least thinner than the device separating insulation film, the electrode terminating at a midpoint between an end of the impurity diffusion layer and an end of the device separating insulation film.
A semiconductor device, comprising:
- an impurity diffusion layer formed on a surface of a certain-conductivity-type semiconductor substrate or well, the impurity diffusion layer having a conductivity opposite to that of the semiconductor substrate or well;
- a device separating insulation film formed at a distance from the impurity diffusion layer;
- and
- an electrode formed thereon via a thin insulation film, the thin insulation film being at least thinner than the device separating insulation film, the electrode terminating at a midpoint between an end of the impurity diffusion layer and an end of the device separating insulation film,
- wherein a distance between the end of the impurity diffusion layer and the end of the device separating insulation film is defined to be not less than 1.2 μm.
Dependencies are inferred from the claim text.