Process for fabricating a network of nanometric lines made of single-crystal silicon and device obtained

A method for making a semiconductor device comprising:

• providing a substrate comprising a silicon body, a lateral isolation region defining a central part in the body, a recess formed in the central part having a dielectric bottom, a first pair of opposed parallel dielectric sidewalls, and a second pair of opposed parallel sidewalls, at least one of the opposed parallel sidewalls of the second pair being formed from single-crystal silicon;
• epitaxially growing an alternating network of single-crystal SiGe alloy parallel lines and single-crystal silicon parallel lines in the recess from the at least one opposed sidewall made from single-crystal silicon;
• and
• etching the single-crystal SiGe alloy lines to form a network of single-crystal silicon parallel lines insulated from each other in the recess.

A device comprising:

• a substrate having a single-crystal silicon body and a lateral isolation region defining a central part in the body;
• a recess in the central part of the body;
• and
• a network of single-crystal silicon parallel lines spaced apart and insulated from each other, each line of the network of single-crystal silicon parallel lines having a width from 5 to 20 nm.

A semiconductor device comprising:

• a substrate having a single-crystal silicon body and a lateral isolation region therein;
• a recess in the body having a bottom defined by a bottom dielectric wall;
• and
• a network of single-crystal silicon parallel lines spaced apart and insulated from each other on the bottom dielectric wall, each line having a width less than 100 nm.