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US 6,583,450 B1Granted
II-VI semiconductor device with BeTe buffer layer
Assignee3M Innovative Properties Company
InventorThomas J. Miller
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Abstract
A II-VI semiconductor device includes a stack of II-VI semiconductor layers electrically connected to a top electrical contact. A GaAs substrate is provided which supports the stack of II-VI semiconductor layers and is positioned opposite to the top electrical contacts. A BeTe buffer layer is provided between the GaAs substrate and the stack of II-VI semiconductor layers. The BeTe buffer layer reduces stacking fault defects at the interface between the GaAs substrate and the stack of II-VI semiconductor layers.
Claims8
A II-VI semiconductor device, comprising:
- a stack of II-VI semiconductor layers;
- an n-type GaAs substrate adjacent the stack of II-VI semiconductor layers;
- and
- an n-type BeTe buffer layer between the n-type GaAs substrate and the stack of II-VI semiconductor layers, the n-type B-eTe buffer layer having a thickness of more than about 80 Å and less than 500 Å to thereby reduce stacking fault defects to a density of less than 3000 stacking faults per square centimeter in a region near an interface between the n-type GaAs substrate and the stack of II-VI semiconductor layers.
1 more element
Dependencies are inferred from the claim text.