Semiconductor device and method of forming a semiconductor device
AssigneeXerox Corporation
InventorsJohn E. Northrup, Christian G. Van de Walle
Life of this patent
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Abstract
A semiconductor device includes group III-V layers formed over a substrate. At least one of the group III-V layers is doped with a dopant. The dopant includes a first dopant and one of a second dopant and an isovalent impurity. The first dopant has a covalent radius different in size than the covalent radii of each of the second dopant and the isovalent impurity.
Claims59
A semiconductor material, comprising:
- at least one group III-V region doped by a p-type dopant;
- wherein the p-type dopant includes a first p-type dopant and a second p-type dopant, the first p-type dopant having a covalent radius different in size than a covalent radius of the second p-type dopant, such that a local stress in the at least one group III-V region caused by the first p-type dopant is compensated by a local stress in the at least one group III-V region caused by the second p-type dopant, such that a concentration of the first p-type dopant in the at least one group III-V region is enhanced.
The semiconductor material of clam 1, wherein the at least one group III-V region is a group III nitride region.
A semiconductor structure, comprising:
- a substrate;
- at least one first group III-V region formed in, on or over the substrate, at least a portion of the at least one first group III-V region doped by one of an n-type dopant and a p-type dopant;
- at least one second group III-V region formed in, on or over the substrate, at least a portion of the at least one second group III-V region doped by the other one of the n-type dopant and the p-type dopant;
- wherein the p-type dopant includes a first p-type dopant and a second p-type dopant, the first p-type dopant having a covalent radius different in size than a covalent radius of the second p-type dopant, such that a local stress in the first or second group III-V region caused by the first p-type dopant is compensated by a local stress in the first or second group III-V region caused by the second p-type dopant, such that a concentration of the first p-type dopant in the first or second group III-V region is enhanced.
A method of doping a group III-V semiconductor material, comprising:
- doping at least one region in the group III-V semiconductor material with a first p-type dopant and a second p-type dopant, wherein the first p-type dopant has a covalent radius different in size than a covalent radius of the second p-type dopant, such that a local stress in the at least one group III-V region caused by the first p-type dopant is compensated by a local stress in the at least one group III-V region caused by the second p-type dopant, such that a concentration of the first p-type dopant in the at least one group III-V region is enhanced.
Dependencies are inferred from the claim text.