Light emitting diode and method for manufacturing the same

A method for the manufacturing a light emitting diode, at least comprising:

• providing a substrate;
• forming a AlGaAs multi-layer epitaxial structure, comprising an active layer sandwiched between an upper cladding layer and a lower cladding layer, on said substrate in the first direction;
• forming a first ohmic contact layer on said AlGaAs multi-layer epitaxial structure in a first direction;
• providing a transparent substrate;
• connecting said transparent substrate to said first ohmic contact
• layer and said upper cladding layer via a transparent adhesive layer coated on said transparent substrate in said first direction;
• removing said substrate;
• removing a portion of said AlGaAs multi-layer epitaxial structure and a portion of said upper cladding layer to expose said upper cladding layer;
• forming a channel within said exposed upper cladding layer to expose said first ohmic contact layer;
• forming a first metal bonding layer on said exposed upper cladding layer in a second direction, said second direction being opposite to said first direction;
• filling said channel to form an electrode connecting channel for electrically coupling said first metal bonding layer to said first ohmic contact layer;
• forming a second ohmic contact layer on said lower cladding layer in said second direction;
• and
• forming a second metal bonding layer on said second ohmic contact layer in said second direction.