Light emitting diode and method of making the same
AssigneeUnited Epitaxy Company, Ltd.
InventorsChih-Sung Chang, Kuang-Neng Yang, Tzer-Perng Chen
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Abstract
A light emitting epi-layer structure which contains a temporality light absorption substrate on one side, the other side thereof can be adhered to a light absorption free transparent substrate in terms of a transparent adhesive layer which is light absorption free too. After that, the light absorption substrate portion is removed by means of an etching process. The resulted light emitting diode has significant improvement in light emitting efficiency. Moreover, the transparent conductive layer is a low resistance and high transparency layer. The current flow can thus be distributed evenly than conventional one.
Claims22
A structure of light emitting diode, comprising:
- a transparent substrate;
- an epi-layers from a bottom thereof, being with a p-type ohmic contact layer, a light emitting cladding layer, and an n-type etch stop layer, wherein said epi-layers have a portion of said n-type etch stop layer, and said light emitting cladding layer is removed so as to expose said p-type ohmic contact layer and further said light emitting cladding layer is to generate light in response to a current injection;
- a first p-type metal electrode formed thereon a bottom surface of said p-type ohmic contact epi-layer;
- an opening formed on an upper surface of said p-type ohmic contact layer, which is exposed;
- a second p-type metal electrode formed and refilled said opening so as to contact said first p-type metal electrode
- a transparent adhesive layer bonding said transparent substrate and said p-type ohmic contact epi-layer and said first p-type metal electrode together;
- a transparent conductive layer formed on an upper surface of said n-type etch stop layer;
- and
- an n-type metal electrode formed on said transparent oxide layer.
A structure of light emitting diode, comprising:
- a transparent substrate;
- an epi-layers, stacked sequentially from a bottom thereof, being with an n-type etch stop layer, an n-type cladding layer, an active layer, a p-type cladding layer, and a p-type ohmic contact epi-layer;
- a p-type metal electrode formed on a bottom surface of said p-type ohmic contact epi-layer;
- a transparent adhesive layer bonding said p-type metal electrode and remnant exposed portion of said p-type ohmic contact layer to said transparent substrate;
- wherein said stack structure has two step levels, and the lower one of two step level exposes a portion of upper surface of said p-type ohmic contact layer, and has a contact channel formed so as to expose a portion of said p-type metal electrode, and the upper step level is exposed said n-type etch stop layer;
- a transparent conductive layer formed on said etch stop layer;
- a first bonding metal electrode formed on said transparent conductive layer;
- and
- a second bonding metal electrode formed to fill said contact channel and protruded said upper surface of said p-type ohmic contact layer.
Dependencies are inferred from the claim text.