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US 6,583,440 B2Granted
Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus
AssigneeSeiko Epson Corporation
InventorMasahiro Yasukawa
Life of this patent
Estimating the term…
Abstract
An SOI (Silicon On Insulator) substrate is provided with: a support substrate (201); a single crystal silicon layer (202) disposed above one surface of the support substrate; an insulation portion (205) disposed between the support substrate and the single crystal silicon layer, the insulation portion comprising a single layer of an insulation film or a lamination structure of a plurality of insulation films, and including a silicon nitride film or a silicon nitride oxide film (204).
Claims16
An element substrate comprising:
- a support substrate;
- a light shield film formed above said support substrate;
- an insulation portion formed above said light shield film,
- said insulation portion comprising a single layer of an insulation film or a lamination structure of a plurality of insulation films, and including a silicon nitride film or a silicon nitride oxide film;
- and
- a single crystal silicon layer disposed above said insulation portion.
3 more elements
An element substrate including a transistor element and a semiconductor substrate,
- said semiconductor substrate comprising:
- a support substrate;
- a light shield film formed above said support substrate, at least overlapped with a channel region of said transistor element;
- an insulation portion formed above said light shield film,
- said insulation portion comprising a single layer of an insulation film or a lamination structure of a plurality of insulation films, and including a silicon nitride film or a silicon nitride oxide film;
- and
- a single crystal silicon layer disposed above said insulation portion,
- said transistor element including a semiconductor layer comprising said single crystal silicon layer.
5 more elements
An electro-optical apparatus comprising
- (A) an element substrate including a transistor element and a semiconductor substrate,
- said semiconductor substrate comprising:
- a support substrate;
- a light shield film formed above said support substrate, at least overlapped with a channel region of said transistor element;
- an insulation portion formed above said light shield film,
- said insulation portion comprising a single layer of an insulation film or a lamination structure of a plurality of insulation films, and including a silicon nitride film or a silicon nitride oxide film;
- and
- a single crystal silicon layer disposed above said insulation portion,
- said transistor element including a semiconductor layer comprising said single crystal silicon layer,
- (B) another substrate opposed to a plane, on which said transistor element is formed, of said element substrate, and
- (C) an electro-optical material layer disposed between said element substrate and said another substrate.
8 more elements
An electronic equipment having an electro-optical apparatus comprising
- (A) an element substrate including a transistor element and a semiconductor substrate,
- said semiconductor substrate comprising:
- a support substrate;
- a light shield film formed above said support substrate, at least overlapped with a channel region of said transistor element;
- an insulation portion formed above said light shield film,
- said insulation portion comprising a single layer of an insulation film or a lamination structure of a plurality of insulation films, and including a silicon nitride film or a silicon nitride oxide film;
- and
- a single crystal silicon layer disposed above said insulation portion,
- said transistor element including a semiconductor layer comprising said single crystal silicon layer,
- (B) another substrate opposed to a plane, on which said transistor element is formed, of said element substrate, and
- (C) an electro-optical material layer disposed between said element substrate and said another substrate.
8 more elements
A semiconductor device including a transistor element and a semiconductor substrate,
- (A) said semiconductor substrate comprising:
- a support substrate;
- a light shield film formed above said support substrate, at least overlapped with a channel region of said transistor element;
- an insulation portion formed above said light shield film,
- said insulation portion comprising a single layer of an insulation film or a lamination structure of a plurality of insulation films, and including a silicon nitride film or a silicon nitride oxide film;
- and
- (B) said transistor element including (i) a semiconductor layer comprising said single crystal silicon layer and (ii) an electrically conductive member disposed at one side of said insulation portion opposite said transistor element.
4 more elements
An electronic equipment having a semiconductor device including a transistor element and a semiconductor substrate,
- (A) said semiconductor substrate comprising:
- a support substrate;
- a light shield film formed above said support substrate, at least overlapped with a channel region of said transistor element;
- an insulation portion formed above said light shield film,
- said insulation portion comprising a single layer of an insulation film or a lamination structure of a plurality of insulation films, and including a silicon nitride film or a silicon nitride oxide film;
- and
- a single crystal silicon layer disposed above said insulation portion,
- (B) said transistor element including (i) a semiconductor layer comprising said single crystal silicon layer and (ii) an electrically conductive member disposed at one side of said insulation portion opposite said transistor element.
5 more elements
Dependencies are inferred from the claim text.