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US 6,583,439 B2Granted
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama
Life of this patent
Estimating the term…
Abstract
There is provided a semiconductor device including a picture display function and a picture capturing function on the same substrate. The semiconductor device includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, which are provided on the same substrate. Moreover, in the semiconductor device, the structure/manufacturing process of the image sensor is made coincident with the structure/manufacturing process of the pixel matrix and the peripheral driver circuit, so that the semiconductor device can be manufactured at low cost.
Claims20
A semiconductor device comprising:
- a display portion and an image sensor portion on a substrate, wherein a plurality of cells are formed on the substrate in a matrix form, each of said cells comprising a pixel portion having at least a pixel TFT and a pixel electrode and a sensor portion having at least a sensor TFT and a photoelectric conversion element;
- a pixel source driver circuit and a pixel gate driver circuit connected to the pixel TFT and formed on the substrate;
- and
- a sensor horizontal driver circuit and a sensor vertical driver circuit connected to the sensor TFT and formed on the substrate,
- wherein the photoelectric conversion element is located over the pixel UT and the sensor TFT, and under the pixel electrode,
- wherein said pixel electrode comprises reflective material and has at least one window therein facing said photoelectric conversion element.
3 more elements
A semiconductor device comprising:
- a display portion and an image sensor portion on a substrate, wherein a plurality of cells are formed on the substrate in a matrix form, each of said cells comprising a pixel portion having at least a pixel TFT and a pixel electrode and a sensor portion having at least a sensor TFT and a photoelectric conversion element;
- a pixel source driver circuit and a pixel gate driver circuit connected to the pixel TFT and formed on the substrate;
- and
- a sensor horizontal driver circuit and a sensor vertical driver circuit connected to the sensor TFT and formed on the substrate,
- wherein the pixel electrode is reflective and has at least one window therein facing said photoelectric conversion element,
- wherein the photoelectric conversion element is located over the pixel TFT and the sensor TFT and under the pixel electrode, and
- wherein the pixel TFT and the sensor TFT are formed on a same layer on the substrate.
4 more elements
A semiconductor device comprising:
- a display portion and an image sensor portion on a substrate, wherein a plurality of cells are formed on the substrate in a matrix form, each of said cells comprising a pixel portion having at least a pixel TFT and a pixel electrode and a sensor portion having at least a sensor TFT and a photoelectric conversion element;
- a pixel source driver circuit and a pixel gate driver circuit connected to the pixel TFT and formed on the substrate;
- and
- a sensor horizontal driver circuit and a sensor vertical driver circuit connected to the sensor TFT and formed on the substrate,
- wherein the pixel electrode is reflective and has at least one window therein facing said photoelectric conversion element,
- wherein the pixel TFT and the sensor TFT are formed over light shielding films, respectively, and
- wherein the photoelectric conversion element is formed over the pixel TFT and the sensor TFT and under the pixel electrode.
4 more elements
A semiconductor device comprising:
- a display portion and an image sensor portion on a substrate, wherein a plurality of cells are formed on the substrate in a matrix form, each of said cells comprising a pixel portion having at least a pixel TFT and a pixel electrode and a sensor portion having at least a sensor TFT and a photoelectric conversion element,
- wherein a pixel driver circuit and a sensor driver circuit are on the same substrate,
- wherein the photoelectric conversion element is formed over the pixel TFT and the sensor TFT and under the pixel electrode, and
- wherein said pixel electrode comprises reflective material and has at least one window therein Pacing said photoelectric conversion element.
1 more element
Dependencies are inferred from the claim text.