Strain-engineered, self-assembled, semiconductor quantum dot lattices
AssigneeThe Regents of the University of California
InventorsPierre M. Petroff, James S. Speck, Jo Anna Johnson, Hao Lee
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Abstract
A method for growing strain-engineered, self-assembled, semiconductor quantum dots (QDs) into ordered lattices. The nucleation and positioning of QDs into lattices is achieved using a periodic sub-surface lattice built-up on a substrate, stressor layer, and spacer layer. The unit cell dimensions, orientation and the number of QDs in the basis are tunable. Moreover, a 2D lattice can be replicated at periodic intervals along the growth direction to form a three-dimensional (3D) lattice of QDs.
Claims30
A structure having strain-engineered, self-assembled, semiconductor quantum dots, comprising:
- a substrate having an ordered lattice of mesas patterned thereon;
- a stressor layer applied to the substrate;
- and
- a spacer layer applied to the stressor layer;
- wherein the quantum dots are deposited on the spacer layer, and islands of the quantum dots are nucleated and positioned on the ordered lattice of mesas as a function of the stressor layer's thickness.
A structure having strain-engineered, self-assembled, semiconductor quantum dots, wherein the structure is created using a process comprising:
- (a) patterning an ordered lattice of mesas on a substrate;
- (b) applying a stressor layer followed by a spacer layer to the substrate;
- and
- (c) depositing the quantum dots on the spacer layer, wherein islands of the quantum dots are nucleated and positioned on the ordered lattice of mesas as a function of the stressor layer's thickness.
Dependencies are inferred from the claim text.