Electron beam exposure method and apparatus

An electron beam exposure method for writing, using an electron beam, an image on a substrate on which a plurality of patterns, and alignment marks associated with the plurality of patterns are formed, comprising:

• the first detection step of selecting some of the plurality of alignment marks, and detecting positions of the selected alignment marks;
• the determination step of determining layout regularity of the plurality of patterns on the basis of the measured values in the first detection step;
• the writing step of writing a pattern on the plurality of patterns by moving the substrate relative to the electron beam on the basis of the regularity determined in the determination step;
• the second detection step of detecting a position of at least one of alignment marks, by using the electron beam, other than the alignment marks selected in the first detection step;
• and
• the correction step of correcting a position variation of the electron beam on the basis of the position of the alignment mark detected in the second detection step, and the position of that alignment mark obtained on the basis of the regularity determined in the determination step.

An electron beam exposure apparatus for writing an image by moving a stage relative to an electron beam, the stage carrying a substrate on which a plurality of patterns, and alignment marks associated with the plurality of patterns are formed, comprising:

• first detection means for selecting some of the plurality of alignment marks, and detecting positions of the selected alignment marks;
• determination means for determining layout regularity of the plurality of patterns on the basis of the measured values of said first detection means;
• and
• writing means for writing a pattern on the plurality of patterns by moving the substrate relative to the electron beam on the basis of the regularity determined by said determination means;
• second detection means for detecting a position of at least one of the alignment marks, by using the electron beam, selected by said first detection means;
• and
• correction means for correcting a position variation of the electron beam on the basis of the position of the alignment mark detected by said second detection means, and the position of that alignment mark detected by said first detection means.

An electron beam exposure apparatus for writing an image by moving a stage relative to an electron beam, the stage carrying a substrate on which a plurality of patterns, and alignment marks associated with the plurality of patterns are formed, comprising:

• first detection means for selecting some of the plurality of alignment marks, and detecting positions of the selected alignment marks;
• determination means for determining layout regularity of the plurality of patterns on the basis of the measured values of said first detection means;
• writing means for writing a pattern on the plurality of patterns by moving the substrate relative to the electron beam on the basis of the regularity determined by said determination means;
• second detection means for detecting a position of at least one of alignment marks, by using the electron beam, other than the alignment marks selected by said first detection means;
• and
• correction means for correcting a position variation of the electron beam on the basis of the position of the alignment mark detected by said second detection means, and the position of that alignment mark obtained on the basis of the regularity determined by said determination means.