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AssigneeUnited Microelectronics Corp.
InventorsTing-Chang Chang, Po-Tsun Liu, Yi-Shien Mor
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The present invention is a method to avoid deterioration of a dielectric characteristic of a dielectric layer having a low dielectric constant (low k) during a stripping process. The method involves first forming a low k dielectric layer on the surface of a substrate of a semiconductor wafer. Then, a patterned photoresist layer is formed over the surface of the low k dielectric layer. The patterned photoresist layer is then used as a hard mask to perform an etching process on the low k dielectric layer. A stripping process is then performed to remove the patterned photoresist layer. Finally, a surface treatment is utilized on the low k dielectric layer to remove Si—OH bonds in the low k dielectric layer so as to avoid moisture absorption of the low k dielectric layer that causes deterioration of the dielectric characteristic.
A method for avoiding deterioration of a dielectric characteristic of a patterned dielectric layer having a low dielectric constant (low k), the patterned dielectric layer formed on a surface of a substrate, the method performing a surface treatment on the patterned low k dielectric layer to remove Si—OH bonds on the patterned low k dielectric layer to avoid moisture absorption of the patterned low k dielectric layer that causes deterioration of the dielectric characteristic.
A method for avoiding deterioration of a dielectric characteristic of a low k dielectric layer, the dielectric layer formed on a surface of a substrate, the method comprising:
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