Low contamination high density plasma etch chambers and methods for making the same
AssigneeLam Research Corporation
InventorsThomas E. Wicker, Robert A. Maraschin, William S. Kennedy
Life of this patent
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Abstract
A plasma processing chamber having a chamber liner and a liner support, the liner support including a flexible wall configured to surround an external surface of the chamber liner, the flexible wall being spaced apart from the wall of the chamber liner. The apparatus can include a heater thermally connected to the liner support so as to thermally conduct heat from the liner support to the chamber liner. The liner support can be made from flexible aluminum material and the chamber liner comprises a ceramic material. The flexible wall can include slots which divide the liner support into a plurality of fingers which enable the flexible wall to absorb thermal stresses.
Claims13
A method of processing a semiconductor substrate in a plasma processing chamber having a chamber liner and a liner support within an interior of the plasma processing chamber, the liner support including a flexible wall configured to surround an external surfaces of the chamber liner, the flexible wall being spaced apart from the external surface of the chamber liner, wherein a semiconductor wafer is transferred into the chamber and an exposed surface of the substrate is processed with a high density plasma.
Dependencies are inferred from the claim text.