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US 6,583,061 B2Granted
Method for creating an anti-blooming structure in a charge coupled device
AssigneeEastman Kodak Company
InventorEric G. Stevens
Life of this patent
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Abstract
A method of creating a lateral overflow drain, anti-blooming structure in a charge coupled device, the method includes steps for self-aligning a peripheral edge of the lateral overflow drain to an edge of the thick field oxide, whereby the overflow drain is substantially covered by the field oxide.
Claims4
A method for creating a lateral overflow drain, anti-blooming structure in a charge coupled device, the method comprising the steps of:
- (a) providing a substrate of a first conductivity type for the charge coupled device;
- (b) providing a layer of oxide abutting the substrate;
- (c) providing a layer of nitride abutting the oxide;
- (d) providing a hard mask abutting the nitride with an etched away portion having a dimension which substantially equals a combined dimension of heavily doped first and second conductivity type subsequently implanted regions in the substrate;
- (e) placing photoresist in a portion of the etched away portion which remaining etched away portion includes a dimension substantially equal to the first conductivity type subsequently implanted region in the substrate;
- (f) implanting ions of the first conductivity type through the remaining etched away portion and into the substrate for creating a channel stop;
- (g) removing the photoresist and placing a second photoresist layer in a portion of the etched away portion wherein a remaining etched away portion includes a dimension substantially equal to the second conductivity type subsequently implanted region in the substrate and wherein the remaining etched away portion is adjacent the implanted channel stop;
- (h) implanting ions of the second conductivity type through the remaining etched away portion and into the substrate for forming the lateral overflow drain;
- (i) etching a portion of the nitride so that a peripheral portion of the etched away portion is substantially aligned with a peripheral portion of the second conductivity type;
- (j) growing a thick field oxide in the etched away portion of the nitride layer so that the lateral overflow drain is covered by the thick field oxide layer.
7 more elements
Dependencies are inferred from the claim text.