Method of forming a semiconductor device having a layer deposited by varying flow of reactants
AssigneeMotorola, Inc.
InventorsPrasad Alluri, Ramachandran Muralidhar
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Abstract
A method of forming a semiconductor device by placing a semiconductor substrate in a vacuum chamber and subjecting the semiconductor substrate (20) to a sub-atmospheric pressure, and depositing a layer (40) on the semiconductor substrate while maintaining the sub-atmospheric pressure. Deposition of the layer (40) is carried out by sequentially (i) flowing a first reactant into the vacuum chamber at a first flow rate, (ii) reducing flow of the first reactant into the vacuum chamber to a second flow rate, and (iii) increasing flow of the first reactant into the vacuum chamber to a third flow rate.
Claims24
A method of forming a semiconductor device comprising the steps of:
- providing a semiconductor substrate;
- forming a feature on the semiconductor substrate, wherein the feature forms a step having a vertical portion and a horizontal portion, the layer is deposited so as to overlie the step, and a ratio of thickness of the layer on the vertical portion to the horizontal portion is greater than approximately 1:2;
- placing the semiconductor substrate in a vacuum chamber and subjecting the semiconductor substrate to a sub-atmospheric pressure;
- and
- depositing a dielectric layer over the step of the feature on the semiconductor substrate while maintaining said sub-atmospheric pressure by sequentially (i) flowing a first reactant into the vacuum chamber at a first flow rate, (ii) reducing flow of said first reactant into the vacuum chamber to a second flow rate, and (iii) increasing flow of the first reactant into the vacuum chamber to a third flow rate.
The method of claim 1, wherein the dielectric material comprises a barium strontium titanate.
- 17.The method of claim 16, further comprising flowing a second reactant into the vacuum chamber, the first reactant comprising b-diketonate and the second reactant comprising O2.
The method of claim 17, wherein the second reactant further comprises N2O.
Dependencies are inferred from the claim text.