Semiconductor integrated circuit device and method for making the same

A method of making a semiconductor integrated circuit device, comprising the steps of:

• (a) forming a first conductive film in through-holes in an insulating film, having a surface, over a semiconductor substrate, said first conductive film having a surface which is recessed from said surface of said insulating film, having a recessed portion in the through-holes between the surface of the first conductive film and the surface of the insulating film;
• and
• (b) forming an aluminum film over said insulating film and in said recessed portion,
• wherein the forming the aluminum film comprises:
• a first step of depositing a first aluminum film by sputtering, under conditions that said semiconductor substrate is kept at a first temperature;
• and
• a second step of depositing a second aluminum film by sputtering on said first aluminum film under conditions that said semiconductor substrate is kept at a second temperature higher than said first temperature.

A method of making a semiconductor integrated circuit device, comprising the steps of:

• (a) forming a tungsten film over an insulating film provided over a semiconductor substrate, the insulating film having through-holes, the tungsten film being formed in the through-holes, the tungsten film having such a thickness that the through-holes are filled with said tungsten film;
• (b) removing said tungsten film over said insulating film so as to leave said tungsten film individually in the through-holes, selectively;
• and
• (c) forming an aluminum film over said insulating film and over said tungsten film in said through-holes,
• wherein said forming the aluminum film comprises:
• a first step of depositing a first aluminum film by sputtering at a first deposition rate;
• and
• a second step of depositing a second aluminum film by sputtering on said first aluminum film at a second deposition rate lower than said first deposition rate.